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d a t a sh eet product speci?cation supersedes data of 1997 jun 19 file under discrete semiconductors, sc13b 1997 dec 08 discrete semiconductors bsh102 n-channel enhancement mode mos transistor a ndbook, halfpage m3d088
1997 dec 08 2 philips semiconductors product speci?cation n-channel enhancement mode mos transistor bsh102 features very low threshold high-speed switching no secondary breakdown direct interface to c-mos, ttl etc. applications power management dc to dc converters battery powered applications glue-logic; interface between logic blocks and/or periphery general purpose switch. description n-channel enhancement mode mos transistor in a sot23 smd package. pinning - sot23 pin symbol description 1 g gate 2 s source 3 d drain fig.1 simplified outline and symbol. handbook, halfpage s d g mam273 2 1 3 top view quick reference data symbol parameter conditions min. max. unit v ds drain-source voltage (dc) - 30 v v sd source-drain diode forward voltage v gd = 0; i s = 0.5 a - 1v v gs gate-source voltage (dc) - 20 v v gsth gate-source threshold voltage v ds =v gs ; i d = 1 ma 1 - v i d drain current (dc) t s =80 c - 0.85 a r dson drain-source on-state resistance v gs = 10 v; i d = 0.5 a - 0.4 w p tot total power dissipation t s =80 c - 0.5 w caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to philips specs.: snw-eq-608, snw-fq-302a and snw-fq-302b.
1997 dec 08 3 philips semiconductors product speci?cation n-channel enhancement mode mos transistor bsh102 limiting values in accordance with the absolute maximum rating system (iec 134). notes 1. t s is the temperature at the soldering point of the drain lead. 2. pulse width and duty cycle limited by maximum junction temperature. 3. device mounted on printed-circuit board with an r th a-tp (ambient to tie-point) of 27.5 k/w. 4. device mounted on printed-circuit board with an r th a-tp (ambient to tie-point) of 90 k/w. symbol parameter conditions min. max. unit v ds drain-source voltage (dc) - 30 v v gs gate-source voltage (dc) - 20 v i d drain current (dc) t s =80 c; note 1 - 0.85 a i dm peak drain current note 2 - 3.4 a p tot total power dissipation t s =80 c - 0.5 w t amb =25 c; note 3 - 0.75 w t amb =25 c; note 4 - 0.54 w t stg storage temperature - 55 +150 c t j operating junction temperature - 55 +150 c source-drain diode i s source current (dc) t s =80 c - 0.5 a i sm peak pulsed source current note 2 - 2a fig.2 power derating curve. handbook, halfpage 0 40 80 160 0.6 0.2 0 0.4 mgm190 120 p tot (w) t s ( c) fig.3 soar. d = 0.01; t s =80 c. (1) r dson limitation. handbook, halfpage mgm210 10 1 110 10 - 3 10 - 2 10 - 1 10 2 10 - 1 v ds (v) i ds (a) t p t p t t p t d = dc (1)
1997 dec 08 4 philips semiconductors product speci?cation n-channel enhancement mode mos transistor bsh102 thermal characteristics symbol parameter value unit r th j-s thermal resistance from junction to soldering point 140 k/w fig.4 transient thermal resistance from junction to soldering point as a function of pulse time; typical values. (1) d =1. (2) d = 0.75. (3) d = 0.5. (4) d = 0.33. (5) d = 0.2. (6) d = 0.1. (7) d = 0.05. (8) d = 0.02. (9) d = 0.01. (10) d =0. handbook, full pagewidth 10 3 10 2 10 1 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 1 mgm201 r th j-s (k/w) t p (s) (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) t p t p t p t t d =
1997 dec 08 5 philips semiconductors product speci?cation n-channel enhancement mode mos transistor bsh102 characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d =10 m a30 -- v v gsth gate-source threshold voltage v gs =v ds ; i d = 1 ma 1 -- v i dss drain-source leakage current v gs = 0; v ds =24v -- 100 na i gss gate leakage current v gs = 20 v; v ds =0 -- 100 na r dson drain-source on-state resistance v gs = 10 v; i d = 0.5 a -- 0.4 w v gs = 4.5 v; i d = 0.25 a -- 0.6 w c iss input capacitance v gs = 0; v ds =24v; f=1mhz - 67 - pf c oss output capacitance v gs = 0; v ds =24v; f=1mhz - 27 - pf c rss reverse transfer capacitance v gs = 0; v ds =24v; f=1mhz - 13 - pf q g total gate charge v gs = 10 v; v dd =15v; i d = 0.5 a; t amb =25 c - 2290 - pc q gs gate-source charge v dd = 15 v; i d = 0.5 a; t amb =25 c - 150 - pc q gd gate-drain charge v dd = 15 v; i d = 0.5 a; t amb =25 c - 780 - pc switching times t d(on) turn-on delay time v gs = 0 to 10 v; v dd =15v; i d = 0.5 a; r gen =6 w - 3.5 - ns t f fall time v gs = 0 to 10 v; v dd =15v; i d = 0.5 a; r gen =6 w - 4 - ns t on turn-on switching time v gs = 0 to 10 v; v dd =15v; i d = 0.5 a; r gen =6 w - 7.5 - ns t d(off) turn-off delay time v gs =10to0v; v dd =15v; i d = 0.5 a; r gen =6 w - 8 - ns t r rise time v gs =10to0v; v dd =15v; i d = 0.5 a; r gen =6 w - 3 - ns t off turn-off switching time v gs =10to0v; v dd =15v; i d = 0.5 a; r gen =6 w - 11 - ns source-drain diode v sd source-drain diode forward voltage v gd = 0; i s = 0.5 a -- 1v t rr reverse recovery time i s = 0.5 a; di/dt = - 100 a/ m s - 25 - ns
1997 dec 08 6 philips semiconductors product speci?cation n-channel enhancement mode mos transistor bsh102 fig.5 switching times test circuit with input and output waveforms. h andbook, full pagewidth mam274 90 % 10 % 10 % 90 % v in v out t d(on) t on t off t f t r t d(off) 0 0 v dd r l v out v in fig.6 gate-source and drain-source voltages as functions of total gate charge; typical values. v dd = 15 v; i d = 0.5 a; t amb =25 c. (1) v ds . (2) v gs. handbook, halfpage q g (pc) v gs (v) v ds (v) mgm205 (1) (2) 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 0 184 414 652 892 1110 1324 1538 1752 1966 2180 fig.7 output characteristics; typical values. t amb =25 c; t p = 300 m s; d =0. (1) v gs =10v. (2) v gs =6v. (3) v gs =5v. (4) v gs = 4.5 v. (5) v gs =4v. (6) v gs = 3.5 v. (7) v gs =3v. (8) v gs = 2.5 v. handbook, halfpage 0 4 3 2 1 0 210 mgm203 468 v ds (v) i d (a) (1) (2) (3) (4) (8) (5) (7) (6)
1997 dec 08 7 philips semiconductors product speci?cation n-channel enhancement mode mos transistor bsh102 fig.8 transfer characteristic; typical values. v ds = 10 v; t amb =25 c; t p = 300 m s; d =0. handbook, halfpage 0 4 3 2 1 0 6 mgm204 24 v gs (v) i d (a) fig.9 capacitance as a function of drain-source voltage; typical values. v gs = 0 ; f = 1 mhz; t amb =25 c. handbook, halfpage 0 160 80 120 40 0 30 mgm202 10 20 c (pf) v ds (v) c iss c oss c rss fig.10 source current as a function of source-drain diode forward voltage; typical values. v gd =0. (1) t amb = 150 c. (2) t amb =25 c. (3) t amb = - 65 c. handbook, halfpage 0 0.4 1.2 2 0 0.4 1.6 1.2 0.8 mgh206 0.8 v sd (v) i s (a) (2) (3) (1) fig.11 drain-source on-state resistance as a function of gate-source voltage; typical values. t amb =25 c; t p = 300 m s; d =0. (1) i d = 0.1 a. (2) i d = 0.25 a. (3) i d = 0.5 a. (4) i d = 0.75 a. (5) i d =1a. (6) i d =2a. (7) i d =4a. handbook, halfpage 10 10 - 1 1 10 6 24 0 mgm207 8 (5) (4) (3) (2) (1) (7) (6) r dson ( w ) v gs (v)
1997 dec 08 8 philips semiconductors product speci?cation n-channel enhancement mode mos transistor bsh102 fig.12 temperature coefficient of gate-source threshold voltage as a function of junction temperature; typical values. v gsth at v ds =v gs ; i d = 1 ma. k v gsth at t j v gsth at 25 c -------------------------------------- = handbook, halfpage - 65 185 0.6 0.8 mgm208 1 1.2 - 15 35 85 135 t j ( c) k fig.13 temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values. (1) r dson at v gs = 10 v; i d = 0.5 ma. (2) r dson at v gs = 4.5 v; i d = 0.25 ma. k r dson at t j r dson at 25 c ----------------------------------------- = handbook, halfpage - 65 185 0.6 1 mgm209 1.4 0.8 1.2 1.6 1.8 - 15 35 85 135 t j ( c) k (2) (1)
1997 dec 08 9 philips semiconductors product speci?cation n-channel enhancement mode mos transistor bsh102 package outline unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 97-02-28 iec jedec eiaj mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface mounted package; 3 leads sot23
1997 dec 08 10 philips semiconductors product speci?cation n-channel enhancement mode mos transistor bsh102 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1997 dec 08 11 philips semiconductors product speci?cation n-channel enhancement mode mos transistor bsh102 notes
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